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SPC4567 - N & P Pair MOSFET

Description

The SPC4567 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel.
  • 40V/6.0A,RDS(ON)=53mΩ@VGS=10V.
  • 40V/5.0A,RDS(ON)=63mΩ@VGS=4.5V.
  • 40V/4.5A,RDS(ON)=78mΩ@VGS=2.5V P-Channel.
  • -40V/-7.2A,RDS(ON)=95mΩ@VGS=-10V.
  • -40V/-5.0A,RDS(ON)=110mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet preview – SPC4567

Datasheet Details

Part number SPC4567
Manufacturer SYNC POWER
File Size 500.19 KB
Description N & P Pair MOSFET
Datasheet download datasheet SPC4567 Datasheet
Additional preview pages of the SPC4567 datasheet.

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Full PDF Text Transcription

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SPC4567 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC4567 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES N-Channel  40V/6.0A,RDS(ON)=53mΩ@VGS=10V  40V/5.
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