SPN2306W Description
The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss...
SPN2306W Key Features
- 30V/5.4A,RDS(ON)=38mΩ@VGS=10V
- 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V
- 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23 package design
SPN2306W Applications
- Power Management in Note book