SPN2306W mosfet equivalent, n-channel mosfet.
* 30V/5.4A,RDS(ON)=38mΩ@VGS=10V
* 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V
* 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V
* Super high density cell design for extremely low
RDS(O.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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