Datasheet Details
| Part number | SPN2306W |
|---|---|
| Manufacturer | SYNC POWER |
| File Size | 337.37 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SPN2306W Datasheet
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General Description
The SPN2306W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
Key Features
- 30V/5.4A,RDS(ON)=38mΩ@VGS=10V.
- 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V.
- 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V.
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability.
- SOT-23 package design PIN.