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SPN2318W Datasheet Preview

SPN2318W Datasheet

N-Channel Enhancement Mode MOSFET

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SPN2318W
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN2318W is the N-Channel logic enhancement
mode power field effect transistors are produced using
high cell density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
40V/3.9A,RDS(ON)= 56mΩ@VGS=10V
40V/3.5A,RDS(ON)= 62mΩ@VGS=4.5V
40V/2.0A,RDS(ON)= 95 mΩ@VGS= 2.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-23 package design
PIN CONFIGURATION ( SOT-23 )
PART MARKING
2009/07/15 Ver.1
Page 1




SYNC POWER

SPN2318W Datasheet Preview

SPN2318W Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SPN2318W
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
SPN2318WS23RGB
SOT-23
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
SPN2318WS23RGB : Tape Reel ; Pb Free ; Halogen -Free
Part Marking
S18WYW
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
40
±12
4.0
3.0
10
1.25
1.25
0.8
150
-55/150
100
2009/07/15 Ver.1
Unit
V
V
A
A
A
W
/W
Page 2


Part Number SPN2318W
Description N-Channel Enhancement Mode MOSFET
Maker SYNC POWER
Total Page 8 Pages
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