SPN2346W Description
The SPN2346W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss...
SPN2346W Key Features
- 20V/6.0A,RDS(ON)=35mΩ@VGS=4.5V
- 20V/5.0A,RDS(ON)=40mΩ@VGS=2.5V
- 20V/4.0A,RDS(ON)=100mΩ@VGS=1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23 package design
SPN2346W Applications
- Power Management in Note book