SPN2622 Dual N-Channel Enhancement Mode MOSFET

SYNC POWER

Description

SPN2622 Dual N-Channel Enhancement Mode MOSFET .
The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

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Datasheet Specifications

Part number: SPN2622
Manufacturer: SYNC POWER
File Size: 179.29 KB
Datasheet: SPN2622-SYNCPOWER.pdf
Description: Dual N-Channel Enhancement Mode MOSFET

Features

* 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design PIN CONFIGURATION( SOT-23-6L ) PART MARKING 2009/12/ 05 Ver.1 Page 1 SPN2622

Applications

* such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC

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SPN2622 Dual N-Channel Enhancement Mode MOSFET SYNC POWER

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