Datasheet4U Logo Datasheet4U.com

SPN2622 - Dual N-Channel Enhancement Mode MOSFET

Description

The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • ‹ 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V ‹ 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOT-23-6L package design PIN.

📥 Download Datasheet

Datasheet preview – SPN2622

Datasheet Details

Part number SPN2622
Manufacturer SYNC POWER
File Size 179.29 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN2622 Datasheet
Additional preview pages of the SPN2622 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPN2622 Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter FEATURES ‹ 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V ‹ 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.
Published: |