SPN4868 mosfet equivalent, n-channel mosfet.
* 60V/6A,RDS(ON)=21mΩ@VGS=10V
* 60V/4A,RDS(ON)=24mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and m.
* Motor Drive
* Power Tools
* LED Lighting
PIN CONFIGURATION (SOP
–8)
PART MARKING
2020/03/.
The SPN4868 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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