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SPN8878B - N-Channel MOSFET

Description

The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

  • 30V/20A,RDS(ON)=14mΩ@VGS=10V.
  • 30V/15A,RDS(ON)=19mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L and TO-251S-3L package design PIN.

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Datasheet Details

Part number SPN8878B
Manufacturer SYNC POWER
File Size 408.47 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8878B Datasheet
Additional preview pages of the SPN8878B datasheet.

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SPN8878B N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8878B is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPN8878B has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  30V/20A,RDS(ON)=14mΩ@VGS=10V  30V/15A,RDS(ON)=19mΩ@VGS=4.
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