SPN8902 mosfet equivalent, n-channel mosfet.
* 100V/2A, RDS(ON)=330mΩ@VGS=10V
* 100V/1A, RDS(ON)=350mΩ@VGS=4.5V
* High density cell design for extremely low RDS (ON)
* Exceptional on-resistance and m.
* High Frequency Small Power Switching for
MB/NB/VGA
* Network DC/DC Power System
* Load Switch
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The SPN8902 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters.
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