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SPN8919 - N-Channel MOSFET

Description

The SPN8919 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

Features

  • 100V/2A, RDS(ON)=180mΩ@VGS=10V.
  • High density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-89 package design PIN.

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Datasheet Details

Part number SPN8919
Manufacturer SYNC POWER
File Size 373.47 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN8919 Datasheet
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Full PDF Text Transcription

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SPN8919 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN8919 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. The SPN8910 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  High Frequency Small Power Switching for MB/NB/VGA  Network DC/DC Power System  Load Switch FEATURES  100V/2A, RDS(ON)=180mΩ@VGS=10V  High density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-89 package design PIN CONFIGURATION SOT-89 PART MARKING 2020/04/17 Ver.
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