Datasheet Details
| Part number | SPP2311 |
|---|---|
| Manufacturer | SYNC POWER |
| File Size | 344.51 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SPP2311 Datasheet
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General Description
The SPP2311 is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- P-Channel -30V/0.45A,RDS(ON)=0.65Ω@VGS=-4.5V -30V/0.35A,RDS(ON)=0.90Ω@VGS=-2.5V -30V/0.25A,RDS(ON)=1.5Ω@VGS=-1.8V -30V/0.25A,RDS(ON)=3.0Ω@VGS=-1.5V.
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current capability.
- ESD protected.
- SOT-23 package design PIN.