SPP2319 Description
The SPP2319 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits where high-side switching , and...
SPP2319 Key Features
- 40V/-3.0A,RDS(ON)=96mΩ@VGS=-10V
- 40V/-2.8A,RDS(ON)=130mΩ@VGS=-4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
SPP2319 Applications
- Power Management in Note book