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SPP2327 - P-Channel MOSFET

General Description

The SPP2327 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • -100V/-0.6A,RDS(ON)=650mΩ@VGS=-10V.
  • -100V/-0.4A,RDS(ON)=760mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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Datasheet Details

Part number SPP2327
Manufacturer SYNC POWER
File Size 499.58 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP2327 Datasheet

Full PDF Text Transcription for SPP2327 (Reference)

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SPP2327 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP2327 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell dens...

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mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  Networking  LED applications FEATURES  -100V/-0.6A,RDS(ON)=650mΩ@VGS=-10V