SPP3467 Description
The SPP3467 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPP3467 Key Features
- 20V/-5.0A,RDS(ON)=90mΩ@VGS=-4.5V
- 20V/-3.5A,RDS(ON)=110mΩ@VGS=-2.5V
- 20V/-1.7A,RDS(ON)=140mΩ@VGS=-1.8V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-6L package design
SPP3467 Applications
- Power Management in Note book