‹ -20V/-8.5A,RDS(ON)= 20mΩ@VGS=-4.5V ‹ -20V/-8.0 A,RDS(ON)= 25mΩ@VGS=-2.5V ‹ -20V/-5.0 A,RDS(ON)= 35mΩ@VGS=-1.8V ‹ Super high density cell design for extremely low RDS (O.

z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC.

The SPP4931W is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

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