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SPP5413 - P-Channel MOSFET

Description

The SPP5413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

Features

  • -40V/-10A,RDS(ON)=26mΩ@VGS=-10V.
  • -40V/- 8A,RDS(ON)=36mΩ@VGS=-4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-252-2L package design PIN.

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Datasheet Details

Part number SPP5413
Manufacturer SYNC POWER
File Size 396.59 KB
Description P-Channel MOSFET
Datasheet download datasheet SPP5413 Datasheet
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SPP5413 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP5413 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. The SPP5413 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  Power Management in Note book  Powered System  DC/DC Converter  Load Switch FEATURES  -40V/-10A,RDS(ON)=26mΩ@VGS=-10V  -40V/- 8A,RDS(ON)=36mΩ@VGS=-4.
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