Datasheet Details
| Part number | SPP6307 |
|---|---|
| Manufacturer | SYNC POWER |
| File Size | 345.17 KB |
| Description | P-Channel MOSFET |
| Datasheet |
 SPP6307 Datasheet
|
|
|
General Description
The SPP6307 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- P-Channel -20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V.
- Super high density cell design for extremely low RDS (ON).
- Exceptional on-resistance and maximum DC current capability.
- ESD protected.
- SOT-363 package design PIN.