Datasheet4U Logo Datasheet4U.com

SPP6308 - Dual P-Channel MOSFET

Description

The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • P-Channel -20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.8A,RDS(ON)=700mΩ@VGS=-2.5V -20V/0.7A,RDS(ON)=950mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-363 (SC-70-6L) package design PIN.

📥 Download Datasheet

Datasheet preview – SPP6308

Datasheet Details

Part number SPP6308
Manufacturer SYNC POWER
File Size 317.77 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SPP6308 Datasheet
Additional preview pages of the SPP6308 datasheet.

📁 Similar Datasheet

Other Datasheets by SYNC POWER

Full PDF Text Transcription

Click to expand full text
SPP6308 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6308 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS • Power Management in Note book • Portable Equipment • Battery Powered System • DC/DC Converter • Load Switch • DSC • LCD Display inverter FEATURES  P-Channel -20V/1.0A,RDS(ON)=520mΩ@VGS=-4.5V -20V/0.
Published: |