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SPP6507 - Dual P-Channel MOSFET

Description

The SPP6507 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V -30V/-1.0A,RDS(ON)=215mΩ@VGS=-1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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Datasheet Details

Part number SPP6507
Manufacturer SYNC POWER
File Size 349.77 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet SPP6507 Datasheet
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SPP6507 Dual P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6507 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.
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