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SY semiconductors
Shenzhen SY Semiconductors Co. LTD.
EB SERIES TRANSISTORS
FEATURES APPLICATION
EB13003M
Absolute Maximum Ratings (Tc=2
PARAMETER Collector–Base Voltage Collector–Emitter Voltage Emitter –Base Voltage
Collector Current Total Power Dissipation Junction Temperature
Storage Temperature
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
VALUE 700 400 9 2.0 45 150
-65-150
UNI T V V V A W
Electronic Characteristics (Tc=25
CHARACTERISTICS
SYMBOL
Collector–Base Cutoff Current
ICBO
Collector–Emitter Cutoff Current
ICEO
Collector–Emitter Voltage
VCEO
Emitter –Base Voltage
VEBO
Collector–Emitter Saturation
Vcesat
Voltage
Base–Emitter Saturation Voltage Vbesat
DC Current Gain
HFE
Storage Time Falling Time
Ts
TEST CONDITION VCB=700v VCE=400v
IC=10mA IB=0 IE=1mA IC=0 IC=0.
EB13003M Datasheet
