* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. ID 80A R DS(ON) (m Ω) Typ 9.5 @ VGS=10V 13.5 @ VGS=4.5V D D G D S G S G S TP S E R IE S TO-220 S TB S E R IE S TO-263(DD-P AK) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C
STB80L60 Datasheet (278.25 KB)
STB80L60
SamHop
278.25 KB
N-channel logic level enhancement mode field effect transistor.
Green Product STB/P80L60 Ver2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V D.
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