* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD HBM > 2KV. D1/D2 S1 S1 G1 TS S OP 18 27 36 45 (TOP VIE W) D1/D2 S2 S2 G2 D1 G1 G2 S1 D2 S2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate
STC8810
SamHop
2.00 MB
Dual n-channel enhancement mode field effect transistor.
STC8810Green Product SamHop Microelectronics Corp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS 20V ID RD.
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