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STM6960 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1.

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Datasheet Details

Part number STM6960
Manufacturer SamHop
File Size 133.16 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet STM6960 Datasheet

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Full PDF Text Transcription (Reference)

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Green Product STM6960 Ver 1.2 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 60V ID 5.5A R DS(ON) (m Ω) Max 55 @ VGS=10V 70 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D2 D2 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b a Limit 60 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 5.5 4.5 25 a Units V V A A A W W °C Maximum Power Dissipation 2 1.28 -55 to 150 Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 62.