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STP3055L2 Datasheet Preview

STP3055L2 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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S T P /B 3055L2
S amHop Microelectronics C orp.
Nov 23, 2004
N-C hannel Logic Level E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
20V
ID R DS (ON) ( m W ) Max
40 @ VGS = 4.5V
18A
60 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-220 and TO-263 P ackage.
D
D
GS
S TB S E R IE S
T O -263(DD-P AK )
G
D
S
S TP S E R IE S
TO-220
G
S
ABS OLUTE MAXIMUM R ATINGS (TC=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=25 C
-P ulsed a
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation @ Tc=25 C
Operating and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
R JC
R JA
Limit
20
12
18
45
15
50
-55 to 175
3
50
Unit
V
V
A
A
A
W
C
C /W
C /W
1




SamHop

STP3055L2 Datasheet Preview

STP3055L2 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

S T P /B 3055L2
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
S ymbol Condition
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
BVDSS VGS =0V, ID =250uA
IDSS VDS =16V, VGS =0V
IGSS VGS = 12V, VDS = 0V
VGS(th) VDS =VGS, ID = 250uA
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =4.5V, ID= 6.0A
VGS =2.5V, ID= 5.2A
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 4.5V
VDS = 10V, ID =5.0A
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS c
C IS S
COSS
CRSS
VDS =8V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 10V,
tr
ID = 1A,
VGEN = 4.5V,
tD(OFF) R L = 10 ohm
tf R GEN = 6 ohm
Total Gate Charge
Qg VDS=10V,ID =6A,VGS=10V
VDS=10V,ID =6A,VGS=4.5V
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =10V, ID = 6A,
Qgd VGS =10V
2
Min Typ C Max Unit
20 V
1 uA
100 nA
0.6 1 1.7 V
25 40 m-ohm
40 60 m-ohm
20 A
17 S
800 PF
205 PF
165 PF
21.5 ns
8.5 ns
39.5 ns
20 ns
14.7 nC
11.6 nC
2.2 nC
3.6 nC


Part Number STP3055L2
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop
Total Page 7 Pages
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