* Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 package. D G D S G S TP S E R IE S TO-220 S ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Volta
STP35N10 Datasheet (130.15 KB)
STP35N10
SamHop
130.15 KB
N-channel logic level enhancement mode field effect transistor.
Green Product STP35N10 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DS.
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