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STP35N10 Datasheet Preview

STP35N10 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

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STP35N10Green
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
100V 35A 30 @ VGS=10V
FEATURES
Super high dense cell design for extremely low RDS(ON).
High power and current handling capability.
TO-220 package.
D
G
D
S
S TP S E R IE S
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
Limit
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
100
±20
35
29.3
IDM -Pulsed a
103
TC=25°C
PD
Maximum Power Dissipation
TC=70°C
75
52.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Apr,22,2014
www.samhop.com.tw




SamHop

STP35N10 Datasheet Preview

STP35N10 Datasheet

N-Channel Logic Level Enhancement Mode Field Effect Transistor

No Preview Available !

STP35N10
Ver 1.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
IGSS Gate-Body leakage current
VGS=0V , ID=250uA
VDS=80V , VGS=0V
VGS= ±20V , VDS=0V
100
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=17.5A
VDS=10V , ID=17.5A
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On DelayTime
tr Rise Time
tD(OFF)
Turn-Off DelayTime
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=17.5A,VGS=10V
VDS=50V,ID=17.5A,
VGS=10V
1.5
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage
VGS=0V,IS=5A
Notes
a.Drain current limited by maximum junction temperature.
b.Guaranteed by design, not subject to production testing.
Typ
2.5
30
12
1490
155
100
36
41
39
22
19
2.6
10
0.8
Max Units
1
±100
V
uA
nA
3.5 V
36 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.3 V
Apr,22,2014
2 www.samhop.com.tw


Part Number STP35N10
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Maker SamHop
Total Page 8 Pages
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