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SamHop

STS2620A Datasheet Preview

STS2620A Datasheet

Dual Enhancement Mode Field Effect Transistor

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STS2620A
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor (N and P Channel )
Ver1.2
PRODUCT SUMMARY (N-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
20V 2.5A
50 @ VGS=4.5V
76 @ VGS=2.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID
RDS(ON) (mΩ) Max
-20V
-2A
106 @ VGS=-4.5V
198 @ VGS=-2.5V
SOT 26
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1 D2
G1 G2
S1
Nch
S2
P ch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
-Pulsed b
TC=25°C
TC=70°C
N-Channel P-Channel
20 -20
±10 ±10
2.5 -2
2 -1.6
8 -7
PD
TJ, TSTG
a
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
TC=25°C
TC=70°C
1
0.64
-55 to 150
Units
V
V
A
A
A
W
W
°C
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
125 °C/W
Details are subject to change without notice.
1
Nov,24,2010
www.samhop.com.tw




SamHop

STS2620A Datasheet Preview

STS2620A Datasheet

Dual Enhancement Mode Field Effect Transistor

No Preview Available !

STS2620A
Ver1.2
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±10V , VDS=0V
20 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=4.5V , ID=2.5A
VGS=2.5V , ID=2A
VDS=5V , ID=2.5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=10V
ID=1A
VGS=4.5V
RGEN=6 ohm
VDS=10V,ID=2.5A,
VGS=4.5V
0.5 0.7 1.5
V
40 50 m ohm
56 76 m ohm
11 S
248 pF
83 pF
67 pF
8.8 ns
14.1 ns
18.1 ns
9 ns
5.6 nC
1.2 nC
2.5 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
0.8 1.2
V
Nov,24,2010
2 www.samhop.com.tw


Part Number STS2620A
Description Dual Enhancement Mode Field Effect Transistor
Maker SamHop
Total Page 9 Pages
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