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STS4622 Datasheet Preview

STS4622 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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S amHop Microelectronics C orp.
S TS 4622
J un, 06 2006
Dual N-Channel Enhancement Mode Field Effect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m : ) Max
40V 3A
65 @ VGS = 10V
85 @ V G S =4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-26 package.
S OT 26
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1 D2
G1
S1
G2
S2
AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
40
20
3
12
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R thJA
100
C /W
1




SamHop

STS4622 Datasheet Preview

STS4622 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S TS 4622
E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
C ondition
VGS =0V, ID =250uA
VDS =32V, VGS =0V
VGS = 20V, VDS= 0V
VDS =VGS, ID = 250uA
VGS =10V, ID =3A
VGS = 4.5V, ID=2A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID=3A
VDS =20V, VGS = 0V
f =1.0MHZ
VDD = 20V,
ID = 1A,
VGS = 10V,
R L = 20 ohm
R GEN = 6 ohm
VDS =20V, ID = 3A,
VGS =10V
Min Typ C Max Unit
40 V
1 uA
100 nA
1 1.8 3 V
53 65 m-ohm
66 85 m-ohm
10 A
7S
330 PF
50 PF
28 PF
7.9 ns
4.6 ns
17 ns
9.3 ns
6.7 nC
0.9 nC
1.6 nC
2


Part Number STS4622
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop
Total Page 8 Pages
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