900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop

STS6604L Datasheet Preview

STS6604L Datasheet

Dual Enhancement Mode Field Effect Transistor

No Preview Available !

STS6604LGreen
Product
Sa mHop Microelectronics C orp.
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
Ver 1.0
PRODUCT SUMMARY (N-Channel)
VDSS ID RDS(ON) (m) Max
60 @ VGS=4.5V
20 4A
75 @ VGS=2.5V
PRODUCT SUMMARY (P-Channel)
VDSS
ID RDS(ON) (m) Max
-20V
-2.5A
138 @ VGS=-4.5V
190 @ VGS=-2.5V
SOT 26
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1
G1 G2
S1
D2
S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
N-Channel
P-Channel
VDS Drain-Source Voltage
VGS Gate-Source Voltage
20 -20
±12 ±12
ID Drain Current-Continuous a TA=25°C
TA=70°C
IDM -Pulsed b
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
4 -2.5
3.2 -2
10 9.4
1.25
0.8
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
100
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,22,2010
www.samhop.com.tw




SamHop

STS6604L Datasheet Preview

STS6604L Datasheet

Dual Enhancement Mode Field Effect Transistor

No Preview Available !

STS6604L
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS=±12V , VDS=0V
20 V
1 uA
±100 nA
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=4.5V , ID=4A
VGS=2.5V , ID=3.5A
VDS=5V , ID=4A
VDS=10V,VGS=0V
f=1.0MHz
VDD=10V
ID=1A
VGS=4.5V
RGEN=6 ohm
VDS=10V,ID=4A,VGS=4.5V
VDS=10V,ID=4A,
VGS=4.5V
0.5 0.74 1.5
V
40 60 m ohm
50 75 m ohm
15 S
224 pF
84 pF
67 pF
8
11.5
15.4
3.2
5
0.85
2.4
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
VSD Diode Forward Voltage b
VGS=0V,IS=1.25A
0.81 1.2
V
Jul,22,2010
2 www.samhop.com.tw


Part Number STS6604L
Description Dual Enhancement Mode Field Effect Transistor
Maker SamHop
Total Page 11 Pages
PDF Download

STS6604L Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 STS6604L Dual Enhancement Mode Field Effect Transistor
SamHop





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy