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SamHop Microelectronics

SDF02N65 Datasheet Preview

SDF02N65 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP02N65
SDF02N65
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Max
650V
2A
5.6 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP02N65HZ
TO-220
Marking Code
SDP02N65
Delivery Mode
Tube
RoHS Status
Halogen Free
SDP02N65PZ
SDF02N65HZ
SDF02N65PZ
TO-220
TO-220F
TO-220F
02N65
SDF02N65
02N65
Tube
Tube
Tube
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP02N65 SDF02N65
VDS Drain-Source Voltage
VGS Gate-Source Voltage
650
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
22
1.4 1.4
IDM -Pulsed a
5.9 5.9
EAS Single Pulse Avalanche Energy c
56
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
75 25
37.5 12.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2 6 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw




SamHop Microelectronics

SDF02N65 Datasheet Preview

SDF02N65 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDP02N65
SDF02N65
Ver 2.1
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=520V , VGS=0V
VGS= ±30V , VDS=0V
650
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
gFS
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS b
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
tf
Qg
Qgs
Qgd
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=VGS , ID=250uA
VGS=10V , ID=1A
VDS=20V , ID=1A
VDS=25V,VGS=0V
f=1.0MHz
VDD=325V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=325V,ID=1A,VGS=10V
VDS=325V,ID=1A,
VGS=10V
2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=50mH,VDD = 50V.(See Figure12)
Typ Max Units
1
±100
V
uA
nA
34V
4.4 5.6 ohm
1.7 S
302 pF
37 pF
10 pF
15.2 ns
16.4 ns
17 ns
9.6 ns
5 nC
1.4 nC
2.2 nC
0.8 1.4
V
Dec,24,2013
2 www.samhop.com.tw


Part Number SDF02N65
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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