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SamHop Microelectronics

SDF05N50 Datasheet Preview

SDF05N50 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP05N50
SDF05N50
Ver 2.3
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V 5A 1.35 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP05N50HZ
TO-220
SDP05N50PZ
TO-220
SDF05N50HZ
TO-220F
SDF05N50PZ
TO-220F
Marking Code
SDP05N50
05N50
SDF05N50
05N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP05N50 SDF05N50
VDS Drain-Source Voltage
500
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
5.0 5.0
3.5 3.5
IDM -Pulsed a
15 15
EAS Single Pulse Avalanche Energy c
40
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
83 28
42 14
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8 5.4 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw




SamHop Microelectronics

SDF05N50 Datasheet Preview

SDF05N50 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDP05N50
SDF05N50
Ver 2.3
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=400V , VGS=0V
VGS= ±20V , VDS=0V
500
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=2.5A
VDS=20V , ID=2.5A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=250V
ID=1A
VGS=10V
RGEN=25 ohm
VDS=250V,ID=1A,VGS=10V
VDS=250V,ID=1A,
VGS=10V
Typ
3
1.35
2.9
545
64
12
22
15.5
23
10
11
2.4
4.4
Max Units
1
±100
V
uA
nA
4V
1.7 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=2A
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure12)
0.79 1.4
V
Dec,24,2013
2 www.samhop.com.tw


Part Number SDF05N50
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
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