900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






SamHop Microelectronics

SDU04N60 Datasheet Preview

SDU04N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDU/D04N60Green
Product
Sa mHop Microelectronics C orp.
Ver 2.2
N-Channel Logic Level Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 4A 2.1 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D
G
S
SDU SERIES
TO-252(D-PAK)
G
DS
SDD SERIES
TO-251S(I-PAK)
G
DS
SDD SERIES
TO-251L(I-PAK)
ORDERING INFORMATION
Ordering Code
Package
SDU04N60HZ
TO-252
Marking Code
SDU04N60
Delivery Mode
Reel
RoHS Status
Halogen Free
SDD04N60HS
TO-251S
SDD04N60
Tube
Halogen Free
SDD04N60HL
TO-251L
SDD04N60
Tube
Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a e
TC=25°C
TC=100°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
Limit
600
±30
4
2.8
11.8
51
83
42
Units
V
V
A
A
A
mJ
W
W
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
°C
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
1.8 °C/W
50 °C/W
Details are subject to change without notice.
1
May,20,2014
www.samhop.com.tw




SamHop Microelectronics

SDU04N60 Datasheet Preview

SDU04N60 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

SDU/D04N60
Ver 2.2
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
4 Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=480V , VGS=0V
VGS= ±30V , VDS=0V
600
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
VDS=VGS , ID=250uA
VGS=10V , ID=2A
VDS=20V , ID=2A
2
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
VDS=25V,VGS=0V
f=1.0MHz
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDD=300V
ID=1A
VGS=10V
RGEN=6 ohm
VDS=300V,ID=1A,VGS=10V
VDS=300V,ID=1A,
VGS=10V
Typ
3
2.1
3.5
500
60
12
20
17
24
12
11.2
2.2
4.9
Max Units
1
±100
V
uA
nA
4V
2.6 ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=1A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 300us, Duty Cycle <_ 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=5mH,VDD = 50V.(See Figure13)
e.Drain current limited by maximum junction temperature.
0.78 1.4
V
May,20,2014
2 www.samhop.com.tw


Part Number SDU04N60
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 11 Pages
PDF Download

SDU04N60 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 SDU04N60 N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics
2 SDU04N65 N-Channel Enhancement Mode Field Effect Transistor
SamHop Microelectronics





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy