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SP07N65 - N-Channel MOSFET

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. PIN 1 56 78 DFN 5x6 12 34.

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Datasheet Details

Part number SP07N65
Manufacturer SamHop Microelectronics
File Size 96.08 KB
Description N-Channel MOSFET
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SP07N65Green Product Sa mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Max 650V 1A 1.68 @ VGS=10V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. PIN 1 56 78 DFN 5x6 12 34 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a c TA=25°C TA=70°C IDM -Pulsed c PD Maximum Power Dissipation a TA=25°C TA=70°C TJ, TSTG Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient Limit 650 ±20 1 0.8 3.5 3.
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