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Green Product
SP3900
Ver 1.1
S a mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
30V
ID
4.5A
R DS(ON) (m Ω) Max
42 @ VGS=10V 74 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
D1
D1
D2
D2
DFN 3x3
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
TA=25°C TA=70°C
Limit 30 ±20 4.5 3.6 30 16
Units V V A A A mJ W W °C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
1.47 0.
SP3900 Datasheet
