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SP3902 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2.

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Datasheet Details

Part number SP3902
Manufacturer SamHop Microelectronics
File Size 108.77 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SP3902 Datasheet

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SP3900 Dual N-Channel Enhancement Mode Field Effect Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product SP3902 Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 10A R DS(ON) (m Ω) Max 17 @ VGS=10V 27 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D1 D1 D2 D2 PIN1 PDFN 5x6 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d ae Limit 30 ±20 TA=25°C TA=70°C 10 8 42 49 TA=25°C TA=70°C 2.5 1.