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Green Product
SP8076
Ver 2.1
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
33V
ID
27A
R DS(ON) (m Ω) Max
4.6 @ VGS=10V 6.9 @ VGS=4.5V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
P in 1
TSON 3.3 x 3.3
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
a
Limit 33 ±20
Units V V A A W °C
TA=25°C TA=25°C
27 90 1.67 -55 to 150
Maximum Power Dissipation Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
75
°C/W
Details are subject to change without notice.
SP8076 Datasheet
