N-Channel Enhancement Mode Field Effect Transistor
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S T A6620
S amHop Microelectronics C orp. Nov. 24 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V DS S
40V
F E AT UR E S S uper high dense cell design for low R DS (ON ).
ID
7A
R DS (ON) ( m Ω ) Max
25 @ V G S = 10V 42 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage. E S D P rotected.
D1
8
D1
7
D2
6
D2
5
P DIP -8 1
1
2
3
4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed
b a
S ymbol V DS V GS 25 C 70 C IDM IS PD ID
Limit 40 20 7 5.9 30 1.
STA6620 Datasheet
