* Super high dense cell design for low R DS(ON). Rugged and reliable. TO-263 Package. ID 26A R DS(ON) (m ) Typ 49 @ VGS=10V D G S S TB S E R IE S TO-263(DD-P AK) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM E AS PD TJ, TSTG Parameter Drain-Source Voltage G
STB31L01 Datasheet (131.10 KB)
STB31L01
SamHop Microelectronics
131.10 KB
N-channel logic level enhancement mode field effect transistor.
Gre r Pro STB31L01 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 10.
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