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STB8444 - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 80A R DS(ON) (m Ω) Max 4.8 @ VGS=10V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S.

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Datasheet Details

Part number STB8444
Manufacturer SamHop Microelectronics
File Size 228.75 KB
Description N-Channel MOSFET
Datasheet download datasheet STB8444 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB/P8444 S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 80A R DS(ON) (m Ω) Max 4.