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SamHop Microelectronics

STC8697 Datasheet Preview

STC8697 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

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STC8697Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9.8 @ VGS=4.0V
20V 10A 10.5 @ VGS=3.8V
15.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
S mini 8
PIN 1
D2 5
D2 6
D1 7
D1 8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous a
-Pulsed b
TA=25°C
TA=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
4 G2
3 S2
2 G1
1 S1
Limit
20
±12
10
8
60
56
1.32
0.84
-55 to 150
95
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Dec,08,2015
www.samhop.com.tw




SamHop Microelectronics

STC8697 Datasheet Preview

STC8697 Datasheet

Dual N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STC8697
Ver 1.2
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=18V , VGS=0V
VGS= ±12V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
DYNAMIC CHARACTERISTICS c
CISS Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS c
tD(ON)
Turn-On Delay Time
tr Rise Time
tD(OFF)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1mA
VGS=4.0V , ID=5A
VGS=3.8V , ID=5A
VGS=2.5V , ID=5A
VDS=10V , ID=5A
VDS=10V,VGS=0V
f=1.0MHz
VDD=16V
ID=5A
VGS=4.0V
RGEN= 6 ohm
VDS=16V,ID=10A,
VGS=4.0V
0.5
7.0
7.5
9.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=10A
Notes
a.Surface Mounted on FR4 Board,t <_ 10sec.
b.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 10V.
Typ
0.8
8.5
9.0
12.0
28
772
253
229
23
84
123
48
13.1
1.8
6.8
0.85
Max Units
V
1 uA
±10 uA
1.5 V
9.8 m ohm
10.5 m ohm
15.0 m ohm
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
Dec,08,2015
2 www.samhop.com.tw


Part Number STC8697
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
Total Page 7 Pages
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