* Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. S mini 8 PIN 1 D2 5 D2 6 D1 7 D1 8 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
STC8697
SamHop Microelectronics
89.39 KB
Dual n-channel enhancement mode field effect transistor.
STC8697Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID RDS(.
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