* Super high dense cell design for low R DS(ON). Rugged and reliable. TO-251 Package. G D S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuou
STD12L01A Datasheet (86.22 KB)
STD12L01A
SamHop Microelectronics
86.22 KB
N-channel logic level enhancement mode field effect transistor.
Gr Pr STD12L01A Ver 2.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V .
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