STD600S transistor equivalent, n-channel enhancement mode field effect transistor.
( m W ) Max
ID
16A
RDS(ON)
Super high dense cell design for low RDS(ON).
55 @ VGS = 10V 70 @ VGS = 4.5V
Rugged and reliable. TO-252 and TO-251 Package.
D
D G S
G D
.
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