STD666S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Key Features

Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK).

STD666S n-channel logic level enhancement mode field effect transistor by SamHop Microelectronics - Datasheet Preview

Datasheet Details

Part number	STD666S
Manufacturer	SamHop Microelectronics
File Size	120.44 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	STD666S Datasheet

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Other Datasheets by SamHop Microelectronics

Part Number	Description
STD660	N-Channel Logic Level Enhancement Mode Field Effect Transistor
STD664S	N-Channel Logic Level Enhancement Mode Field Effect Transistor
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STD6025NL	N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Green Product STU666S STD666S Ver 1.0 SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS 60V ID 6A RDS(ON) (mΩ) Max 101 @ VGS=10V 126 @ VGS=4.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO-251 Package. G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a e Limit 60 ±20 TC=25°C TC=70°C 6 4.