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SamHop Microelectronics

STD9410 Datasheet Preview

STD9410 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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S T U/D9410
S amHop Microelectronics C orp.
P reliminary May.28 2004
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
www.DataShee3t40UV.com 24A
R DS (ON) ( m W ) Max
32 @ VGS = 10V
57 @ VGS = 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
TO-252 and TO-251 P ackage.
D
G
S
S DU S E R IE S
T O -252AA(D-P AK )
GDS
S DD S E R IE S
TO-251(l-P AK)
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ TJ=125 C
-P ulsed a
Drain-S ource Diode Forward C urrent
S ymbol
VDS
VGS
ID
IDM
IS
Limit
30
20
24
60
20
Unit
V
V
A
A
A
Maximum P ower Dissipation @ Tc=25 C
PD
50
W
Operating and S torage Temperature R ange TJ, TS TG
-55 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
R JC
R JA
3
50
C /W
C /W
1




SamHop Microelectronics

STD9410 Datasheet Preview

STD9410 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S T U/D9410
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol Condition
Min Typ C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
BVDSS VGS =0V, ID =250uA
30
Zero Gate Voltage Drain Current
www.DataSGhaetee-t4BUo.dcyomLeakage
ON CHARACTERISTICS b
IDSS VDS =24V, VGS =0V
IGSS VGS = 20V, VDS =0V
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA
1
Drain-S ource On-S tate R esistance
R DS(ON)
VGS =10V, ID =7A
VGS = 4.5V,ID= 3.5A
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = 5V, VGS = 10V
VDS = 5V, ID =7A
45
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
SWITCHING CHARACTERISTICS c
C IS S
COSS
CRSS
VDS =15V, VGS = 0V
f =1.0MHZ
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VDD = 15V
tr ID = 1A
tD(O F F )
VGS = 10V
R GEN = 10 ohm
tf
Total Gate Charge
Qg VDS =15V, ID =1A,VGS =10V
VDS =15V, ID =1A,VGS =4.5V
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =15V, ID = 1A
Qgd VGS =10V
V
1 uA
100 nA
1.7 2.5 V
27 32 m ohm
52 57 m ohm
A
8S
599 PF
110 PF
81 PF
9.7 ns
15.4 ns
17.2 ns
10.8 ns
13 nC
6.8 nC
2.4 nC
3.1 nC
2


Part Number STD9410
Description N-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics
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