* ( m £[ ) Max ID 25A RDS(ON) Super high dense cell design for low RDS(ON). 30@ VGS = 10V 40@ VGS = 4.5V Rugged and reliable. TO-252 and TO-251 Package. D D G S G D S G SDU SERIES TO-252AA(D-PAK) SDD SERIES TO-251(l-PAK) S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter D
STD9916L Datasheet (860.67 KB)
STD9916L
SamHop Microelectronics
860.67 KB
N-channel enhancement mode field effect transistor.
STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY VDSS www.DataShee.
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