STE339S - N-Channel Logic Level Enhancement Mode Field Effect Transistor

SamHop Microelectronics

Key Features

Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. 5 6 7 8 PIN 1 1 2 3 4 Power Pak 5 x 6.

STE339S n-channel logic level enhancement mode field effect transistor by SamHop Microelectronics - Datasheet Preview

Datasheet Details

Part number	STE339S
Manufacturer	SamHop Microelectronics
File Size	84.67 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	STE339S Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
STE3300-16T3MI	Wet Tantalum Capacitors	Vishay
STE3300-30T4MI	Wet Tantalum Capacitors	Vishay
STE30NK90Z	N-CHANNEL MOSFET	STMicroelectronics
STE36N50	N Channel Enhancement Mode Power MOS Transistor in Isotop Package	ST Microelectronics
STE36N50	N-Channel Enhancement Mode Power MOS Transistor in Isotop Package	ST Microelectronics

Other Datasheets by SamHop Microelectronics

Part Number	Description
STE334S	N-Channel Logic Level Enhancement Mode Field Effect Transistor
STE336S	N-Channel Logic Level Enhancement Mode Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Green Product STE339S Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 30V ID 12A R DS(ON) (m Ω) Max 10.5 @ VGS=10V 15 @ VGS=4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount Package. 5 6 7 8 PIN 1 1 2 3 4 Power Pak 5 x 6 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed a Limit 30 ±20 TA=25°C TA=70°C TA=25°C TA=70°C 12 9.6 42 3.