* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D G S S P IN 1 G D T DF N 2X3 (Bottom view) S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source V
STF2455
SamHop Microelectronics
92.52 KB
N-channel enhancement mode field effect transistor.
Green Product STF2455 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R DS(ON).
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