* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. G2 S2 G1 S1 S1 P IN 1 Bottom Drain Contact S2 G1 S1 T D F N 2X 3 3 2 1 4 G2 5 6 S2 S2 D1/D2 S1 (Bottom view) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS
STF8810
SamHop Microelectronics
103.01 KB
Dual n-channel enhancement mode field effect transistor.
Green Product STF8810 Ver 1.3 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS ID R D.
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