STG8206 Description
S T G 8206 S amHop Microelectronics C orp. Dec,27.2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 20 @ V G S = 4.5V 30 @ V G S = 2.5V R ugged and reliable.