STG8211 Description
S T G 8211 S amHop Microelectronics C orp. 2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 10A R DS (ON) S uper high dense cell design for low R DS (ON ). 13.5 @ V G S = 4.0V 18 @ V G S = 2.5V R ugged and reliable.