* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulse
STK103
SamHop Microelectronics
96.00 KB
N-channel mosfet.
Gre r Pro STK103 Ver 1.1 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V ID 2.0A R.
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