* Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D G S SOT-89 D G S ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Co
STK400
SamHop Microelectronics
92.13 KB
N-channel mosfet.
Gre r Pro STK400 Ver 1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 40V ID 1.3A R .
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